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參數資料
| 型號： | 2SA1013-O |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, TO-92MOD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SA1013-O |
2SA1013-O
PNP
Epitaxial Silicon
Transistor
Features
Capable of 0.9Watts of Power Dissipation.
Collector-current -1.0A
Collector-base Voltage -160V
Operating and storage junction temperature range: -55
to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1.0mAdc, IB=0)
-160
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-100uAdc, IE=0)
-160
---
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-10mAdc, IC=0)
-6.0
---
Vdc
ICBO
Collector Cutoff Current
(VCB=-150Vdc, IE=0)
---
-1.0
uAdc
ICEO
Collector Cutoff Current
(VCB=-120Vdc, IE=0)
---
-10
uAdc
IEBO
Emitter Cutoff Current
(VEB=-6.0Vdc, IC=0)
---
-1.0
uAdc
ON CHARACTERISTICS
hFE(1)
DC Current Gain
(IC=-200mAdc, VCE=-5.0Vdc)
65
310
---
hFE(2)
DC Current Gain
(IC=-50mAdc, VCE=-5.0Vdc)
40
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-50mAdc)
---
-1.5
Vdc
VBE
Base-Emitter Saturation Voltage
(IC=-5.0mAdc, VCE=-5.0Vdc)
---
-0.75
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Transistor Frequency
(IC=-200mAdc, VCE=-5.0Vdc,
f=30MHz)
-15
---
MHz
CLASSIFICATION OF HFE(1)
Rank
R
O
Y
Range
60-120
120-200
200-300
TO-92MOD
A
B
C
D
E
F
G
H
I
J
K
M
N
L
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.030
---
.750
B
---
.039
---
1.00
C
---
.031
---
.80
D
---
.024
---
0.60
E
---
.201
---
5.10
F
.050
1.27
G
.050
1.27
H
.100
2.54
I
.039
1.00
J
---
.087
---
2.20
K
---
.024
---
.60
L
---
.323
---
8.20
M
---
.413
---
10.50
N
---
.161
---
4.10
123
1. EMITTER
2. COLLECTOR
3. BASE
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: 3
2007/03/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
2SA1013-Y
2SA1013
2SA1013-R
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1013-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 160V 1A 3-Pin TO-92 Mod |
| 2SA1013-O(T6FJT,FM | |
| 2SA1013-O(TE6,F,M) | 功能描述:兩極晶體管 - BJT Transistor PNP, 160V, 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1013-O,T6MIBF(J | 功能描述:TRANS PNP 1A 160V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包裝:散裝 零件狀態:停產 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:160V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 50mA，500mA 電流 - 集電極截止（最大值）:1μA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:60 @ 200mA，5V 功率 - 最大值:900mW 頻率 - 躍遷:50MHz 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-226-3，TO-92-3 長體 供應商器件封裝:TO-92L 標準包裝:1 |
| 2SA1013R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1A I(C) | TO-92 |
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