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參數資料
| 型號： | 2SA1015(L) |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 172K |
| 代理商： | 2SA1015(L) |
2SA1015(L)
2007-11-01
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications
Low Noise Amplifier Applications
High voltage and high current: VCEO = 50 V (min),
IC = 150 mA (max)
Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = 6 V, IC = 150 mA
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Low noise: NF = 0.2dB (typ.) (f = 1 kHz)
Complementary to 2SC1815 (L)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
50
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
hFE (1)
(Note)
VCE = 6 V, IC = 2 mA
70
400
DC current gain
hFE (2)
VCE = 6 V, IC = 150 mA
25
80
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 10 mA
1.1
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0
f
= 1 MHz
4
7
pF
Base intrinsic resistance
rbb’
VCB = 10 V, IE = 1 mA
f
= 30 MHz
30
Ω
NF (1)
VCE = 6 V, IC = 0.1 mA
f
= 100 Hz, RG = 10 kΩ
0.5
6
Noise figure
NF (2)
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 10 kΩ
0.2
3
dB
Note: hFE (1) classification O: 70~140, Y: 120~240, GR: 200~400
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1015(L)-GR | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1015(L)-Y | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1015-O | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1015-Y | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1015-GR | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1015LBL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 |
| 2SA1015LGR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 |
| 2SA1015LGR(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1015LO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | TO-92 |
| 2SA1015LT1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:General purpose transistors |
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