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參數資料
| 型號： | 2SA1037-S-TP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 171K |
| 代理商： | 2SA1037-S-TP |
2SA1037-R
PNP Silicon
Epitaxial Transistors
Features
Small Package
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
A
20
11/01/01
TM
Micro Commercial Components
www.mccsemi.com
1 of 2
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
-0.15
A
PD
Total Device Dissipation
0.2
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=-1mAdc,IB=0)
-50
V
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50uAdc,IE=0)
-60
V
V(BR)EBO
Collector-Base Breakdown Voltage
(IE=-50uAdc,IC=0)
-6.0
V
ICBO
Collector-Base Cutoff Current
(VCB=-60Vdc, IE=0)
-0.1
Adc
IEBO
Emitter-Base Cutoff Current
(VEB=-6.0Vdc, IC=0)
-0.1
uAdc
ON CHARACTERISTICS
HFE
DC Current Gain
(IC=-1.0mAdc, VCE=-6.0Vdc)
120
560
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-5.0mAdc, IB=-5.0mAdc)
-0.5
Vdc
)7
Transition Frequency
(VCE=-12Vdc,IC=-2mAdc,f=30MHZ)
120
MHZ
CLASSIFICATION OF
hFE
Rank
Q
R
S
Range
120-270
180-390
270-560
Marking
FQ
FR
FS
E
B
C
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Mounting:any position
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
2SA1037-Q
2SA1037-S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1038 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1038S | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-voltage Amplifier Transistor (−120V, −50mA) |
| 2SA1038SR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAK |
| 2SA1038SS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | SPAK |
| 2SA1038STPR | 功能描述:兩極晶體管 - BJT TRANS GP BJT PNP 120V 0.05A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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