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參數資料
| 型號： | 2SA1160-C |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TO-92MOD, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 143K |
| 代理商： | 2SA1160-C |
2SA1160
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulsed (Note 1)
ICP
4
A
Base current
IB
2
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
6
V
DC current gain
hFE (1)
(Note 2)
VCE = 1 V, IC = 0.5 A
140
600
Collector-emitter saturation voltage
hFE (2)
VCE = 1 V, IC = 4 A
60
120
Base-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 50 mA
0.20
0.50
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 2 A
0.83
1.5
V
Transition frequency
fT
VCE = 1 V, IC = 0.5 A
140
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
50
pF
Note 2: hFE (1) Classification A: 140 to 280, B: 200 to 400, C: 300 to 600
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
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| 2SA1160C | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| 2SA1161 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-92 -15V -.03A .2W BEC |
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| 2SA1162_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Audio Frequency General Purpose Amplifier Applications |
| 2SA1162_08 | 制造商:BILIN 制造商全稱:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
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