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參數資料
| 型號： | 2SA1163-GR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, SC-59, TO-236MOD, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 163K |
| 代理商： | 2SA1163-GR |
2SA1163
2003-03-27
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2713
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-100
mA
Base current
IB
-20
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -120 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
DC current gain
hFE
(Note)
VCE = -6 V, IC = -2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = -10 mA, IB = -1 mA
-0.3
V
Transition frequency
fT
VCE = -6 V, IC = -1 mA
100
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
4
pF
Noise figure
NF
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
Rg
= 10 kW,
1.0
10
dB
Note: hFE classification GR (G): 200~400, BL (L): 350~700
(
) marking symbol
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1163-GR(T5L,F,T | 制造商:Toshiba America Electronic Components 功能描述:TOS2SA1163-GR(T5L,F,T 77 TRANSISTOR |
| 2SA1163-GR(TE85L,F | 制造商:Toshiba America Electronic Components 功能描述:PB SMALL SIGNAL TRANSISTOR - Tape and Reel 制造商:Toshiba 功能描述:PNP |
| 2SA1163-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1163-GR,LF | 功能描述:TRANS PNP 120V 0.1A SMINI 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態:有效 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:120V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:300mV @ 1mA，10mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:150mW 頻率 - 躍遷:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:S-Mini 標準包裝:1 |
| 2SA1163GRT5LFT | 功能描述:兩極晶體管 - BJT x34 Small Signal Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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