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參數(shù)資料
| 型號： | 2SA1201 |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 112K |
| 代理商： | 2SA1201 |
2SA1201
PNP Silicon
Power Transistors
Features
With SOT-89 package
Power amplifier applications
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-120
V
VCBO
Collector-Base Voltage
-120
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current
-800
mA
IB
Base Current
-160
mA
PC
Collector power dissipation
500
1000(Note 1)
W
TJ
Junction Temperature
150
TSTG
Storage Temperature
-55 to +150
Note 1: Mounted on ceramic substrate (250mm
2 x 0.8t)
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ.
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
-120
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage*
(IE=-1mAdc, IC=0)
-5
---
Vdc
ICBO
Collector-Base Cutoff Current
(VCB=-120Vdc,IE=0)
---
-0.1
uAdc
IEBO
Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0)
---
-0.1
uAdc
ON CHARACTERISTICS
hFE
Forward Current Transfer ratio
(IC=-0.1Adc, VCE=-5.0Vdc) (Note 2)
80
---
240
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-0.5Adc, IB=-50mAdc)
---
-1.0
Vdc
VBE
Base-Emitter Voltage
(IC=-0.5Adc, VCE=-5.0Vdc)
---
-1.0
Vdc
fT
Transition Frequency
(IC=-0.1Adc, VCE=-5.0Vdc)
---
120
---
MHz
Cob
Collector Output Capacitance
(VCB=-10V, IE=0, f=1MHz)
---
30
pF