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參數資料
| 型號： | 2SA1222M |
| 廠商： | NEC Corp. |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 85K |
| 代理商： | 2SA1222M |
2002
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
Complementary transistor with 2SC2958 and 2SC2959
V
CEO
= 140 V: 2SA1221/2SC2958
V
CEO
= 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
160
V
Collector to emitter voltage
V
CEO
140/–160
V
Emitter to base voltage
V
EBO
5.0
V
Collector current (DC)
I
C(DC)
500
mA
Collector current (pulse)
I
C(pulse)
*
1.0
A
Total power dissipation
P
T
1.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
=
100 V, I
E
= 0
200
nA
Emitter cutoff current
I
EBO
V
EB
=
5.0 V, I
C
= 0
200
nA
DC current gain
h
FE
**
V
CE
=
2.0 V, I
C
=
100 mA
100
150
400
DC base voltage
V
BE
**
V
CE
=
5.0 V, I
C
=
20 mA
0.6
0.64
0.7
V
Collector saturation voltage
V
CE(sat)
**
I
C
=
1.0 A, I
B
=
0.2 A
0.6
0.9
V
Base saturation voltage
V
BE(sat)
**
I
C
=
1.0 A, I
B
=
0.2 A
1.1
0.3
V
Output capacitance
C
ob
V
CB
=
10 V, I
E
= 0, f = 1.0 MHz
24
40
pF
Gain bandwidth product
f
T
V
CE
=
10 V, I
E
= 20 mA
30
45
MHz
** Pulse test PW
≤
350
μ
s, duty cycle
≤
2% per pulsed
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|---|---|
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