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參數(shù)資料
型號: 2SA1225O
元件分類: 小信號晶體管
英文描述: 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, 2-7J1A, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 144K
代理商: 2SA1225O
2SA1225
2010-02-05
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1225
Power Amplifier Applications
Driver Stage Amplifier Applications
High transition frequency: fT = 100 MHz (typ.)
Complementary to 2SC2983
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
160
V
Collector-emitter voltage
VCEO
160
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Base current
IB
0.3
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
15
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1225 1500 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-LE2 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-T2B 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-T1BE2 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1226-LE3 30 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA1225-O(Q) 制造商:Toshiba 功能描述:PNP Cut Tape
2SA1225-Y(Q) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 160V 1.5A PW-MOLD
2SA1225-Y(T6L1,NQ) 制造商:Toshiba 功能描述:PNP
2SA1226-E3(T1B) 制造商:Renesas Electronics Corporation 功能描述:
2SA1226-E4(T1B-A) 制造商:Renesas Electronics Corporation 功能描述:
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