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參數資料
| 型號： | 2SA1241Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, 2-7J1A, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 182K |
| 代理商： | 2SA1241Y |
2SA1241
2010-08-24
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1241
Power Amplifier Applications
Power Switching Applications
Low Collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
Excellent switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC3076
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit：mm
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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