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參數資料
| 型號： | 2SA1300-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | 2-5F1B, SC-43, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 92K |
| 代理商： | 2SA1300-Y |
2SA1300
2003-03-24
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 60 (min), 120 (typ.) (VCE = 1 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
VCES
-20
Collector-emitter voltage
VCEO
-10
V
Emitter-base voltage
VEBO
-6
V
DC
IC
-2
Collector current
Pulsed
(Note 1)
ICP
-5
A
Base current
IB
-0.2
A
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Note 1: Pulse width
= 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -20 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -6 V, IC = 0
-0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = -10 mA, IB = 0
-10
V
Emitter-base breakdown voltage
V (BR) EBO
IE = -1 mA, IC = 0
-6
V
hFE (1)
(Note 2)
VCE = -1 V, IC = -0.5 A
140
600
DC current gain
hFE (2)
VCE = -1 V, IC = -4 A
60
120
Collector-emitter saturation voltage
VCE (sat)
IC = -2 A, IB = -50 mA
-0.2
-0.5
V
Base-emitter voltage
VBE
VCE = -1 V, IC = -2 A
-0.83
-1.5
V
Transition frequency
fT
VCE = -1 V, IC = -0.5 A
140
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
50
pF
Note 2: hFE (1) classification Y: 140~280, GR: 200~400, BL: 300~600
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1300-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1301R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1302 | 制造商:TOS 功能描述:1302 TOSHIBA NOTES |
| 2SA1302-0 | 制造商:TT Electronics / Semelab 功能描述:PNP power transistor,2SA1302 15A |
| 2SA1302-O | 功能描述:TRANS PNP -200V -15A TO-3PL RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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