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參數資料
| 型號： | 2SA1310 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, NS-B1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 37K |
| 代理商： | 2SA1310 |
1
Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC3312
I
Features
G
Allowing supply with the radial taping.
G
Low noise voltage NV.
G
High foward current transfer ratio h
FE
.
G
Optimum for high-density mounting.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–60
–55
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NV
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10
μ
A, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CE
= –1V, I
C
= –30mA
V
CB
= –5V, I
E
= 2mA, f = 200MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
–60
–55
–7
180
typ
200
max
– 0.1
–1
700
– 0.6
–1
150
Unit
μ
A
μ
A
V
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
4.0
±
0.2
marking
2.54
±
0.15
1.27
1.27
3
±
0
1
±
0
2
±
0
0
±
0
0
1
2
3
+
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1312-BL(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1312-BL(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:PNP 120V TRANSISTOR. - Tape and Reel |
| 2SA1312-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1312GRTE85LF | 功能描述:兩極晶體管 - BJT PNP Audio Amp VCEO -120V HFE 700 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1313-O(TE85L,F) | 功能描述:TRANS PNP 50V 500MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態:Digi-Key 停止供應 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:500mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:250mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:70 @ 100mA，1V 功率 - 最大值:200mW 頻率 - 躍遷:200MHz 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商器件封裝:S-Mini 標準包裝:1 |
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