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參數資料
| 型號： | 2SA1358 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 120K |
| 代理商： | 2SA1358 |
2SA1358
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
Complementary to 2SC3421
Suitable for driver of 60 to 80 watts
High breakdown voltage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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| 2SA1364-13-1E | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1364-T13-1C | 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1365-12-1F | 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1358-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1358Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1358-Y(Q) | 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
| 2SA1359-Y(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
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