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參數資料
| 型號： | 2SA1360-Y |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8H1A, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 130K |
| 代理商： | 2SA1360-Y |
2SA1360
2010-03-10
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1360
Audio Frequency Amplifier Applications
Complementary to 2SC3423
Small collector output capacitance: Cob = 2.5 pF (typ.)
High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
5
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
5
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1360-Y(Q) | 功能描述:兩極晶體管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1362 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-59-15V -.8A .2WSURFACE MOUNT |
| 2SA1362-GR(T5L,F,T | 功能描述:兩極晶體管 - BJT Bipolar Small-Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1362-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1362-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
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