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參數資料
| 型號： | 2SA1380-C |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 39K |
| 代理商： | 2SA1380-C |
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display,
Video Output Applications
Ordering number:ENN1425C
2SA1380/2SC3502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
Features
High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
Adoption of FBET process
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
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相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1380-C | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3502-D | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SC3502-F | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1380-F | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3502-E | 0.1 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-126 |
相關代理商/技術參數 |
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| 2SA1381 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1381CSTU | 功能描述:兩極晶體管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1381DSTU | 功能描述:兩極晶體管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1381ESTU | 功能描述:兩極晶體管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1381FSTU | 功能描述:兩極晶體管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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