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參數資料
型號: 2SA1412-ZL
元件分類: 小信號晶體管
英文描述: 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, MP-3, SC-63, 3 PIN
文件頁數: 1/4頁
文件大小: 710K
代理商: 2SA1412-ZL
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confirm that this is the latest version.
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SILICON POWER TRANSISTOR
2SA1412-Z
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DATA SHEET
Document No. D18250EJ3V0DS00 (3rd edition)
(Previous No. TC-1635A)
Date Published June 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SA1412-Z is designed for High Voltage Switching, especially in
Hybrid Integrated Circuits.
FEATURES
High Voltage: VCEO =
400 V
High Speed: tf ≤ 0.7
μs
Complement to 2SC3631-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to base voltage
VCBO
400
V
Collector to emitter voltage
VCEO
400
V
Base to emitter voltage
VEBO
7
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (pulse)
Note 1
IC(pulse)
4.0
A
Total power dissipation (TA = 25
°C)
Note 2
PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
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