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參數資料
| 型號： | 2SA1437 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor for High-hFE, AF Amplifier Applications(用于高電流增益，AF放大器應用的PNP硅外延平面型晶體管) |
| 中文描述： | 進步黨硅外延平面晶體管的高HFE的，自動對焦放大器應用程序（用于高電流增益，自動對焦放大器應用的新進步黨硅外延平面型晶體管） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | 2SA1437 |
73098HA (KT)/4231MH, 4077TA, TS No.2524-1/3
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
High-h
FE
, AF Amplifier Applications
Ordering number:EN2524A
2SA1437
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2003A
[2SA1437]
Applications
· AF amplifier, various drivers, muting circuit.
Features
· Very small-sized package permitting sets to be made
smaller and slimer.
· Adoption of FBET process.
· High DC current gain : (h
FE
=400 to 1000).
· High breakdown voltage : (V
CEO
≥
100V).
· Low collector-to-emitter saturation voltage
: (V
CE(sat)
≤
0.5V).
· High V
EBO
: (V
EBO
≥
15V).
· Small C
ob
: (C
ob
=4.0pF typ).
JEDEC : TO-92
EIAJ : SC-43
SANYO : NP
1 : Emitter
2 : Collector
3 : Base
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