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參數資料
| 型號： | 2SA1500P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 5 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | SC-46, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 173K |
| 代理商： | 2SA1500P |
1
Power Transistors
2SA1500
Silicon PNP epitaxial planar type
For power switching
s Features
q
High-speed switching
q
High collector to base voltage VCBO
q
Wide area of safe operation (ASO)
q
Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–400
–7
–8
–5
40
1.4
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –400V, IE = 0
VEB = –7V, IC = 0
IC = –10mA, IB = 0
VCE = –5V, IC = – 0.5A
VCE = –5V, IC = –2A
IC = –2A, IB = – 0.4A
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A,
IB1 = – 0.4A, IB2 = 0.4A,
VCC = –100V
min
–400
20
8
typ
15
max
–100
100
–1.0
–1.5
1.0
2.5
1.0
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
P
hFE1
20 to 60
50 to 100
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
JEDEC:TO–220(a)
EIAJ:SC–46(a)
10.5
±0.5
4.5
±0.2
15.4
±0.3
6.7
±0.3
2.8
±0.2
4.2
±0.3
2.8
±0.2
1.5
±0.2
9.3
13.5
±0.5
9.5
±0.2
1.4
±0.1
2.5
±0.2
1.4
±0.1
0.6
+0.1
–0.2
0.8
±0.1
φ3.7±0.2
8.0
±0.2
5.08
±0.5
2.54
±0.3
Solder
Dip
13
2
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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