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參數資料
| 型號： | 2SA1535 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 1 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | 2SA1535 |
1
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
I
Features
G
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
G
High transition frequency f
T
G
Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–180
–150
–180
–5
–1.5
–1
15
2.0
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SA1535
2SA1535A
2SA1535
2SA1535A
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
10.0
±
0.2
5.5
±
0.2
7
±
0
1
±
0
0
±
0
1
±
0
S
4
0.5
+0.2
–0.1
1.4
±
0.1
1.3
±
0.2
0.8
±
0.1
2.54
±
0.25
5.08
±
0.5
2
1
3
2.7
±
0.2
4.2
±
0.2
4
±
0
φ
3.1
±
0.1
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= –150V, I
E
= 0
I
C
= –1mA, I
B
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –5V, I
C
= –500mA
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= –50mA, f = 10MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
min
–150
–180
–5
90
50
typ
160
100
– 0.5
–1.0
200
30
max
–10
220
–2.0
–2.0
50
Unit
μ
A
V
V
V
V
MHz
pF
2SA1535
2SA1535
2SA1535A
*
h
FE1
Rank classification
Rank
Q
R
h
FE1
90 to 155
130 to 220
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PDF描述 |
|---|---|
| 2SA1535A | Silicon PNP epitaxial planar type |
| 2SA1553 | Power Amplifier PNP Transistor(功率放大器PNP晶體管) |
| 2SA1576ART1 | General Purpose Amplifier Transistors |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1535A | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1535AR | 功能描述:TRANS PNP HF 180VCEO 1A TO-220F RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1536 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126ML -80V -.2A 8W ECB |
| 2SA1537 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126ML -80V -.5A 10W ECB |
| 2SA1539 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-126ML -120V -.3A 8W ECB |
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