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參數(shù)資料
| 型號(hào)： | 2SA1535AP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | SC-67, TO-220F-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 200K |
| 代理商： | 2SA1535AP |
Power Transistors
1
Publication date: February 2003
SJD00008BED
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944, 2SC3944A
■ Features
Excellent collector current I
C characteristics of forward current
transfer ratio hFE
High transition frequency f
T
A complementary pair with 2SC3944 and 2SC3944A, is optimum
for the driver-stage of a 60 W to 100 W output amplifier
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA1535
VCBO
150
V
(Emitter open)
2SA1535A
180
Collector-emitter voltage 2SA1535
VCEO
150
V
(Base open)
2SA1535A
180
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation TC = 25°CPC
15
W
2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SA1535
VCEO
IC = 100 A, IB = 0
150
V
(Base open)
2SA1535A
IC = 100 A, IB = 0
180
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff
2SA1535
ICBO
VCB = 150 V, IE = 0
10
A
current (Emitter open)
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 150 mA
65
160
330
hFE2
VCE = 5 V, IC = 500 mA
50
100
Collector-emitter saturation voltage
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
0.5
2.0
V
Base-emitter saturation voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
1.0
2.0
V
Transition frequency
fT
VCE = 10 V, IC = 50 mA, f = 10 MHz
200
MHz
Collector output capacitance
Cob
VCB
= 10 V, I
E
= 0, f = 1 MHz
30
50
pF
(Common base, input open circuited)
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
Rank
P
Q
R
S
hFE1
65 to 110
90 to 155
130 to 220
185 to 330
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F-A1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SA1535AS | 1 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1535S | 1 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA1535R | 1 A, 150 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1535AR | 功能描述:TRANS PNP HF 180VCEO 1A TO-220F RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SA1536 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126ML -80V -.2A 8W ECB |
| 2SA1537 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-126ML -80V -.5A 10W ECB |
| 2SA1539 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANS. TO-126ML -120V -.3A 8W ECB |
| 2SA1542 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-60V -.15A .3W ECB |
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