- 您現在的位置：買賣IC網 > PDF目錄370050 > 2SA1615-Z (NEC Corp.) PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PDF資料下載
參數資料
| 型號： | 2SA1615-Z |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進步黨硅外延的高晶體管高速開關 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 118K |
| 代理商： | 2SA1615-Z |
Document No. D16119EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
Large current capacity:
I
C(DC)
:
10 A, I
C(pulse)
:
15 A
High h
FE
and low collector saturation voltage:
h
FE
= 200 MIN. (@V
CE
=
2.0 V, I
C
=
0.5 A)
V
CE(sat)
≤
0.25 V (@I
C
=
4.0 A, I
B
=
0.05 A)
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
30
V
Collector to emitter voltage
V
CEO
20
V
Emitter to base voltage
V
EBO
10
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
15
A
Base current (DC)
I
B(DC)
0.5
A
Total power dissipation
P
T
(T
a
= 25
°
C)**
1.0
W
Total power dissipation
P
T
(T
c
= 25
°
C)
15
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
≤
10 ms, duty cycle
≤
50%
**Printing board mounted
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1617 | Silicon PNP Epitaxial |
| 2SA1624 | PNP EPITAXIAL PLANAR SILICON TRANSISTOR |
| 2SA1641 | PNP Epitaxial Planar Silicon Transistors for High-Current Switching Applications(用于大電流轉換應用的PNP硅外延平面型晶體管) |
| 2SA1645K | TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 7A I(C) | TO-220AB |
| 2SA1645L | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1615-ZT1L | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1617 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-55V -.1A .15W EBC |
| 2SA1618 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1618-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。