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參數資料
| 型號： | 2SA1618 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMV, 2-3L1A, 5 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 207K |
| 代理商： | 2SA1618 |
2SA1618
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1618
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
High hFE: hFE = 120~400
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
Complementary to 2SC4207
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
(Note 1)
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1618-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP SMV |
| 2SA1618-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1618-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
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