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參數資料
| 型號： | 2SA1621-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 81K |
| 代理商： | 2SA1621-Y |
2SA1621
2003-03-24
1
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1621
Audio Power Amplifier Applications
High hFE: hFE = 100~320
Complementary to 2SC4210
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-35
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-800
mA
Base current
IB
-160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = -35 V, IE = 0
-0.1
mA
Emitter cut-off current
IEBO
VEB = -5 V, IC = 0
-0.1
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = -10 mA, IB = 0
-30
V
hFE (1)
(Note)
VCE = -1 V, IC = -100 mA
100
320
DC current gain
hFE (2)
VCE = -1 V, IC = -700 mA
35
Collector-emitter saturation voltage
VCE (sat)
IC = -500 mA, IB = -20 mA
-0.7
V
Base-emitter voltage
VBE
VCE = -1 V, IC = -10 mA
-0.5
-0.8
V
Transition frequency
fT
VCE = -5 V, IC = -10 mA
120
MHz
Collector output capacitance
Cob
VCB = -10 V, IE = 0, f = 1 MHz
19
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
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PDF描述 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1621-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1624 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-9 -250V -.1A .5WECB |
| 2SA1624E-AA | 制造商:Sony Semiconductor Solutions Division 功能描述: |
| 2SA1625 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1625-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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