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參數資料
型號: 2SA1627-K
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126
封裝: TO-126, 3 PIN
文件頁數: 1/3頁
文件大小: 97K
代理商: 2SA1627-K
UTC2SA1627
PNPEPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R204-010,B
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC 2SA1627 is designed for general purpose
amplifier and high speed switching applications.
FEATURES
*High voltage
*Low collector saturation voltage.
*High-speed switching
TO-126
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-600
V
Collector-Emitter Voltage
VCEO
-600
V
Emitter-Base Voltage
VEBO
-7.0
V
Collector Power Dissipation
PC
1.0
W
Collector Current(DC)
Ic
-1.0
A
Collector Current(PULSE)
Icp *1
-2.0
A
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 to +150
°C
*1 : PW≦10ms,Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB= -600V,IE=0
-10
A
Emitter Cut-Off Current
IEBO
VEB= -7.0V,Ic=0
-10
A
DC Current Gain
hFE1*2
VCE= -5.0V,Ic= -0.1A
30
58
120
DC Current Gain
hFE2*2
VCE= -5.0V,Ic= -0.5A
5
19
Collector-Emitter Saturation Voltage
VCE(sat)*2 Ic= -0.3A,IB= -0.06A
-0.28
-0.5
V
Base-Emitter Saturation Voltage
VBE(sat)*2
Ic= -0.3A,IB= -0.06A
-0.85
-1.2
V
Gain Bandwidth Product
fT
VCE= -10V, IE=0.1A
10
28
MHz
相關PDF資料
PDF描述
2SA1627L 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1627K 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1627M 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1627 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1627K 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
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2SA1641S-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 20V 8A TO-251
2SA1643 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1645-K-AZ 制造商:Renesas Electronics Corporation 功能描述:
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