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參數資料
| 型號： | 2SA1646-ZM-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 139K |
| 代理商： | 2SA1646-ZM-AZ |
Document No. D16120EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat) =
0.3 V MAX. @IC = 6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current
ID(DC)
10
A
Collector current
IC(pulse)
PW
≤ 300
s,
duty cycle
≤ 10%
20
A
Base current
IB(DC)
6.0
A
Total power dissipation
PT
Tc = 25
°C
40
W
Total power dissipation
PT
Ta = 25
°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150 °C
PACKAGE DRAWING (UNIT: mm)
?
Electrode Connection
?
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1647-Z | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252 |
| 2SA1647-AZ | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 2SA1647-AZ | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 2SA1647 | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251 |
| 2SA1647 | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1647-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-K-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1647-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1647-Z-AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
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