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參數(shù)資料
| 型號： | 2SA1649 |
| 廠商： | NEC Corp. |
| 英文描述： | PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 中文描述： | 進步黨硅外延高功率晶體管的高速開關 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 143K |
| 代理商： | 2SA1649 |
Document No. D15588EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1649, 2SA1649-Z
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1649 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
V
CE(sat)
=
0.3 V MAX. (@I
C
=
3 A)
Fast switching speed:
t
f
= 0.3
μ
s MAX. (@I
C
=
3 A)
High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
20
A
Base current (DC)
I
B(DC)
3.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
15
W
Total power dissipation
P
T
(Ta = 25
°
C)
1.0**, 2.0***
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
*:
**: Printing board mounted
***: 7.5 mm
PW
≤
300
μ
s, duty cycle
≤
10%
2
×
0.7 mm ceramic board mounted
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1649-Z | PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING |
| 2SA1649K | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR |
| 2SA1649L | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
| 2SA1649M | TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 10A I(C) | TO-251VAR |
| 2SA1649-ZK | 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1649-AZ(K) | 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1649-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1649-L-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1649-L-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1650-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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