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參數資料
| 型號： | 2SA1652-M-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 161K |
| 代理商： | 2SA1652-M-AZ |
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1652 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation.
This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
Mold package that does not require an insulating board or
insulation bushing
Fast switching speed
Low collector-to-emitter saturation voltage:
VCE(sat)
≤ 0.3 V (MAX.) @IC = 6 A
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
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ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current
IC(DC)
10
A
Collector current
IC(pulse)
PW
≤ 300
s, duty cycle ≤ 10%
20
A
Base current
IB(DC)
6.0
A
Total power dissipation
PT
Tc = 25
°C
25
W
Total power dissipation
PT
Ta = 25
°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
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