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參數資料
型號: 2SA1709
廠商: Sanyo Electric Co.,Ltd.
英文描述: PNP Epitaxial Planar Silicon Transistors for High-Voltage Switching Applications(用于高電壓轉換應用的PNP硅外延平面型晶體管)
中文描述: 進步黨硅外延平面晶體管的高壓開關應用(用于高電壓轉換應用的新進步黨硅外延平面型晶體管)
文件頁數: 1/5頁
文件大小: 153K
代理商: 2SA1709
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1709/2SC4489
High-Voltage Switching Applications
Ordering number:EN3096
83098HA (KT)/5169MO, TS No.3096–1/5
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Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2064
[2SA1709/2SC4489]
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage, large current capacity.
· Fast switching speed.
Electrical Characteristics
at Ta = 25C
E : Emitter
C : Collector
B : Base
SANYO : NMP
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相關PDF資料
PDF描述
2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SA1714K PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SA1714L PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SA1714M PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
相關代理商/技術參數
參數描述
2SA1709S-AN 功能描述:兩極晶體管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1709T-AN 功能描述:兩極晶體管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA171 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-5 -20V -.05A .125W
2SA1720-AZ-L 制造商:Renesas Electronics 功能描述:Bulk
2SA1720-K(AZ) 制造商:Renesas Electronics Corporation 功能描述:
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