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參數資料
| 型號： | 2SA1743M |
| 廠商： | NEC Corp. |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-220VAR |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 10A條一（c）|至220VAR |
| 文件頁數： | 1/6頁 |
| 文件大小： | 130K |
| 代理商： | 2SA1743M |
Document No. D16126EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1743
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1743 is a power transistor developed for high-speed
switching and features a high h
FE
at low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
=
2 V, I
C
=
2 A)
V
CE(sat)
≤
0.3 V (I
C
=
6 A, I
B
=
0.3 A)
Full-mold package that does not require an insulating board or
bushing
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
*
20
A
Base current (DC)
I
B(DC)
5.0
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
* PW
≤
300
μ
s, duty cycle
≤
10%
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1746 | Silicon PNP Epitaxial Planar Transistor(Chopper Regulator, Switch and General Purpose) |
| 2SA1759 | High-Voltage Switching Transistor(高電壓開關晶體管) |
| 2SC4505 | Power Transistor(功率晶體管) |
| 2SC4620 | Power Transistor(功率晶體管) |
| 2SA1774 | General Purpose Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1743-M(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1744-AZ | 制造商:Renesas Electronics 功能描述:Trans GP BJT PNP 60V 15A 3-Pin(3+Tab) TO-220 Isolated Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,15A,isoTO-220 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 15A 3-Pin(3+Tab) TO-220 Isolated |
| 2SA1744-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1744AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1744-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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