欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SA1744L
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 15A I(C) | TO-220VAR
中文描述: 晶體管|晶體管|進步黨| 60V的五(巴西)總裁|第15A一(c)|至220VAR
文件頁數: 1/6頁
文件大小: 144K
代理商: 2SA1744L
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1744 is a power transistor developed for high-speed
switching and features a high h
FE
at Low V
CE(sat)
. This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High h
FE
and low V
CE(sat)
:
h
FE
100 (V
CE
=
2 V, I
C
=
3 A)
V
CE(sat)
0.3 V (I
C
=
8 A, I
B
=
0.4 A)
Full-mold package that does not require an insulating board or
bushing
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
15
A
Collector current (pulse)
I
C(pulse)
*
30
A
Base current (DC)
I
B(DC)
7.5
A
Total power dissipation
P
T
(Tc = 25
°
C)
30
W
Total power dissipation
P
T
(Ta = 25
°
C)
2.0
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
* PW
300
μ
s, duty cycle
10%
相關PDF資料
PDF描述
2SA1744M 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
2SA1745 Low-Frequency General-Purpose Amp Applications
2SC4555 Low-Frequency General-Purpose Amp Applications
2SA1749 High-Definition CRT Display Video Output Applications
2SC4564 High-Definition CRT Display Video Output Applications
相關代理商/技術參數
參數描述
2SA1744-L(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SA1744-M-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SA1746 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT PNP 50V 12A 3-Pin (3+Tab) TO-3PF Box 制造商:Sanken Electric Co Ltd 功能描述:PNP Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP 50V 12A TO3PF
2SA17480RL 功能描述:TRANS PNP 50VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1748GRL 功能描述:TRANS PNP 50VCEO 50MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿(最大):4.7V 頻率 - 轉換:47GHz 噪聲系數(dB典型值@頻率):0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA,3V 電流 - 集電極 (Ic)(最大):45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD,扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR
主站蜘蛛池模板: 扬中市| 邵阳市| 西充县| 韩城市| 喜德县| 启东市| 自治县| 广灵县| 甘肃省| 塔河县| 平山县| 岑溪市| 石门县| 辽源市| 盐津县| 德化县| 沙雅县| 泰安市| 桓台县| 甘谷县| 湖口县| 宜宾市| 大荔县| 广宗县| 汝阳县| 双流县| 贡嘎县| 承德县| 兴安盟| 吕梁市| 安新县| 东乌珠穆沁旗| 信宜市| 惠州市| 新安县| 顺昌县| 农安县| 社会| 陆河县| 梅河口市| 义乌市|