- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄55785 > 2SA1771 12 A, 80 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SA1771 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SC-67, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 149K |
| 代理商： | 2SA1771 |
2SA1771
2004-07-26
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1771
High-Current Switching Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 6 A)
High-speed switching: tstg = 0.6 s (typ.)
High emitter-base breakdown voltage: V (BR) EBO = 14 V (min)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
14
V
Collector current
IC
12
A
Base current
IB
1.2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 14 V, IC = 0
―
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
―
V
hFE (1)
VCE = 1 V, IC = 1 A
100
―
320
DC current gain
hFE (2)
VCE = 1 V, IC = 6 A
40
―
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.3 A
―
0.2
0.4
Base-emitter saturation voltage
VBE (sat)
IC = 6 A, IB = 0.3 A
―
0.9
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
50
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
300
―
pF
Turn-on time
ton
―
0.2
―
Storage time
tstg
―
0.6
―
Switching time
Fall time
tf
IB1 = IB2 = 0.3 A, duty cycle ≤ 1%
―
0.1
―
s
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
I B1
20 s
VCC ≈ 30 V
Output
5
IB1
IB2
Input
I B2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA1774EB-S | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1786E | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1797T100PQ | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1804 | 8 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 2SA1811 | 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1771(F) | 制造商:Toshiba 功能描述:PNP -80V -12A 100 to 320 TO220NIS 制造商:Toshiba 功能描述:PNP -80V -12A 100 to 320 TO220NIS Bulk |
| 2SA1773E-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP HIGHV 400V 2A TO-251 |
| 2SA1774 | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1774EBTLP | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel |
| 2SA1774EBTLQ | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SA1774EBQ |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。