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參數資料
| 型號： | 2SA1774T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon General Purpose Amplifier Transistor |
| 中文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 463-01, SC-75, SC-90, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | 2SA1774T1 |
Semiconductor Components Industries, LLC, 2006
May, 2006 Rev. 6
1
Publication Order Number:
2SA1774/D
2SA1774
PNP Silicon General
Purpose Amplifier Transistor
This PNP transistor is designed for general purpose amplifier
applications. This device is housed in the SC75/SOT416/SC90
package which is designed for low power surface mount
applications, where board space is at a premium.
Features
Reduces Board Space
High h
FE
, 210460 (typical)
Low V
CE(sat)
, < 0.5 V
Available in 8 mm, 7inch/3000 Unit Tape and Reel
PbFree Packages are Available*
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector Emitter Voltage
V
(BR)CBO
60
Vdc
Collector Base Voltage
V
(BR)CEO
50
Vdc
Emitter Base Voltage
V
(BR)EBO
6.0
Vdc
Collector Current Continuous
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
150
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 ~ +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR4 glass epoxy printed circuit board using the
minimum recommended footprint.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
SC75
CASE 46301
STYLE 1
1
2
3
1
F9
M
= Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
F9 M
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| 2SA1774T1G | 功能描述:兩極晶體管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1774TL | 制造商:Rohm 功能描述:PNP Cut Tape |
| 2SA1774TLQ | 功能描述:兩極晶體管 - BJT PNP 50V 0.15A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1774TLR | 功能描述:兩極晶體管 - BJT PNP 50V 0.15A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1774TLS | 功能描述:兩極晶體管 - BJT PNP 50V 0.15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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