欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: 2SA1806JR
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Si, PNP, RF SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
文件頁數: 1/3頁
文件大小: 115K
代理商: 2SA1806JR
Transistors
1
Publication date: August 2003
SJC00300AED
2SA1806J
Silicon PNP epitaxial planar type
For high speed switching
■ Features
High speed switching
Low collector-emitter saturation voltage V
CE(sat)
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
15
V
Collector-emitter voltage (Base open)
VCEO
15
V
Emitter-base voltage (Collector open)
VEBO
4V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 8 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
IEBO
VCE = 3 V, IC = 0
0.1
A
Forward current transfer ratio
hFE1 *
VCE = 1 V, IC = 10 mA
50
150
hFE2
VCE
= 1 V, I
C
= 1 mA
30
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
0.2
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
800
1 500
MHz
Collector output capacitance
Cob
VCB = 5 V, IE = 0, f = 1 MHz
1
pF
(Common base, input open circuited)
Turn-on time
ton
Refer to the switching time
12
ns
Turn-off time
toff
measurement circuit
20
ns
Storage time
tstg
19
ns
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0
to
0.02
0.10
max.
0.70
+0.05 –0.03
(0.375)
5
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
Marking Symbol: AK
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Ranking is not given for any product.
Rank
Q
R
hFE1
50 to 120
90 to 150
This product complies with the RoHS Directive (EU 2002/95/EC).
相關PDF資料
PDF描述
2SA1807F5TLNP 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1807F5TLP 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1807TLN 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1812P 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SD1963Q 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SA1806JRL 功能描述:TRANS PNP 15VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SA1807TLP 功能描述:兩極晶體管 - BJT PNP;HIGH VOLTAGE HFE RANK ’P’ RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1812T100Q 功能描述:兩極晶體管 - BJT PNP 400V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA1813-TL-E 制造商:SANYO 功能描述:omo 25V 0.15A 500 to 1200 MCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP 25V 0.15A SOT323 制造商:Sanyo 功能描述:0
2SA1815 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR MCP-15V -.05A .25W CBE SURFACE MT
主站蜘蛛池模板: 虎林市| 雅江县| 偏关县| 菏泽市| 百色市| 喜德县| 黄山市| 洛隆县| 莲花县| 丹东市| 依兰县| 大名县| 阳高县| 永春县| 富顺县| 平果县| 那曲县| 巴彦淖尔市| 莱芜市| 唐海县| 慈溪市| 大安市| 上犹县| 石楼县| 浠水县| 承德市| 宜君县| 牟定县| 弥渡县| 仁布县| 云浮市| 上饶县| 万盛区| 南丹县| 高安市| 山西省| 延寿县| 兴安盟| 甘泉县| 饶阳县| 孝感市|