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參數資料
型號: 2SA1841
廠商: NEC Corp.
英文描述: PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING
中文描述: 進步黨硅外延晶體管(達林頓連接筆記本高)高速開關
文件頁數: 1/6頁
文件大小: 194K
代理商: 2SA1841
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
DARLINGTON POWER TRANSISTOR
2SA1841
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D15590EJ3V0DS00 (3rd edition)
Date Published July 2004 NS CP(K)
Printed in Japan
2002
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SA1841
MP-10
DESCRIPTION
The 2SA1841 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-
mounted in radial taping specifications, thus contributing to
mounting cost reduction.
FEATURES
Auto-mounting possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High DC current amplifiers due to Darlington connection
h
FE
= 4000 to 20000 (V
CE
=
2.0 V, I
C
=
4.0 A)
On-chip C-to-E reverse diode
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Collector to Base Voltage
V
CBO
100
100
8.0
8.0
16
0.8
V
Collector to Emitter Voltage
V
CEO
V
Emitter to Base Voltage
V
EBO
V
Collector Current (DC)
I
C(DC)
I
C(pulse)
Note
A
Collector Current (pulse)
A
Base Current (DC)
I
B(DC)
A
Total Power Dissipation (T
A
= 25°C)
P
T
1.8
W
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
10 ms, Duty Cycle
2%
The mark
shows major revised points.
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