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參數資料
型號: 2SA1847L
廠商: NEC Corp.
英文描述: TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 10A I(C) | SIP
中文描述: 晶體管|晶體管|進步黨| 100V的五(巴西)總裁| 10A條(c)的|園區
文件頁數: 1/6頁
文件大小: 142K
代理商: 2SA1847L
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The 2SA1847 is a power transistor developed for high-speed switching and features a high h
FE
at low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mount possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High h
FE
and low V
CE(sat)
:
V
CE(sat)
=
0.3 V MAX. @I
C
=
6.0 V, I
B
=
0.3 A
h
FE
100
@V
CE
=
2.0 V, I
C
=
2.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
V
CBO
150
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
7.0
V
Collector current (DC)
I
C(DC)
10
A
Collector current (pulse)
I
C(pulse)
PW
300
μ
s, duty cycle
2%
20
A
Base current (DC)
I
B(DC)
6.0
A
Total power dissipation
P
T
Ta = 25
°
C
1.8
W
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
55 to +150
°
C
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