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參數資料
| 型號： | 2SA1871-GA3-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 2SA1871-GA3-AZ |
1998
Document No. D16144EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1871
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1871 is a transistor developed for high-speed high-
voltage switching and is ideal for use in switching elements such
as switching regulators and DC/DC converters.
FEATURES
New package with dimensions in between those of small signal
and power signal package
High voltage
Fast switching speed
Complementary transistor with 2SC4942
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
IC(pulse)
PW
≤ 10 ms, duty cycle ≤ 50 %
2.0
A
Total power dissipation
PT
7.5 cm
2
× 0.7 mm ceramic board used
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrode connection
1: Emitter
2: Collector
3: Base
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| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1871-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SA1873-GR | 功能描述:兩極晶體管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F | 功能描述:兩極晶體管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP USV |
| 2SA1873-GRTE85L | 功能描述:TRANS 2PNP 50V 0.15A USV 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態:有效 晶體管類型:2 PNP（雙）配對，共發射極 電流 - 集電極（Ic）（最大值）:150mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:300mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:200mW 頻率 - 躍遷:80MHz 安裝類型:表面貼裝 封裝/外殼:5-TSSOP，SC-70-5，SOT-353 供應商器件封裝:USV 標準包裝:1 |
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