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參數資料
| 型號： | 2SA1907P |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | FM100, TO-3PF, 3 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 28K |
| 代理商： | 2SA1907P |
35
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5099)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–80
–6
–3
60(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
sTypical Switching Characteristics (Common Emitter)
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
–10max
–80min
50min
–0.5max
20typ
150typ
Unit
A
V
MHz
pF
Conditions
VCB=–80V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–2A
IC=–12A, IB=–0.2A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1907
(Ta=25°C)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
Safe Operating Area (Single Pulse)
h FE– I C Temperature Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
0
–2
–1
–4
–3
–5
–6
–1
–2
–3
–4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
–200mA
–150mA
–100mA
–80mA
–50mA
–30mA
–20mA
I B=–10mA
0
–3
–2
–1
0
–0.5
–1.0
–1.5
Base Current I B(A)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=–6A
–4A
–2A
–0.02
–0.1
–0.5
–1
–5 –6
30
50
100
300
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=–4V)
Typ
–5
–10
–50
–100
–0.1
–1
–0.5
–10
–20
–5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
1ms
0.02
0.1
0.05
0.5
1
5 6
0
20
10
30
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=–12V)
Emitter Current I E(A)
Typ
f T– I E Characteristics (Typical)
0
–6
–4
–2
0
–1.5
–1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=–4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
(V CE=–4V)
–0.02
–0.1
–0.5
–1
–5 –6
30
50
100
300
DC
Current
Gain
h
FE
125C
25C
–30C
Collector Current I C(A)
θj-a–t Characteristics
0.3
1
5
0.5
1
1 0
100
1000
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
Pc – T a Derating
60
40
20
3.5
0
05 0
25
75
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
VCC
(V)
–30
RL
(
)
10
IC
(A)
–3
VBB2
(V)
5
IB2
(A)
0.3
ton
(
s)
0.18typ
tstg
(
s)
1.10typ
tf
(
s)
0.21typ
IB1
(A)
–0.3
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.4
1.5
BE
C
5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.5g
a. Part No.
b. Lot No.
hFE Rank O(50to100), P(70to140), Y(90to180)
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