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參數資料
型號: 2SA1932
元件分類: 功率晶體管
英文描述: 1 A, 230 V, PNP, Si, POWER TRANSISTOR
文件頁數: 1/4頁
文件大小: 134K
代理商: 2SA1932
2SA1932
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1932
Power Amplifier Applications
Driver Stage Amplifier Applications
High transition frequency: fT = 70 MHz (typ.)
Complementary to 2SC5174
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
0.1
A
Collector power dissipation
PC
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
相關PDF資料
PDF描述
2SA1934-O 5 A, 80 V, PNP, Si, POWER TRANSISTOR
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2SA1944-T13-1G 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1971 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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