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參數(shù)資料
型號: 2SA1953-B
元件分類: 小信號晶體管
英文描述: 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
封裝: S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 413K
代理商: 2SA1953-B
2SA1953
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1953
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
相關(guān)PDF資料
PDF描述
2SA1953A 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1955A 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1955CT 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1955F-A 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1955FV-A 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
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