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參數(shù)資料
| 型號(hào)： | 2SA1987-R |
| 元件分類： | 功率晶體管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-21F1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 128K |
| 代理商： | 2SA1987-R |
2SA1987
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1987
Power Amplifier Applications
High breakdown voltage: VCEO = 230 V (min)
Complementary to 2SC5359
Recommended for 100-W high-fidelity audio frequency amplifier
output stage.
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
230
V
Collector-emitter voltage
VCEO
230
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
15
A
Base current
IB
1.5
A
Collector power dissipation
(Tc = 25°C)
PC
180
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 230 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
230
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 7 A
35
70
―
Collector-emitter saturation voltage
VCE (sat)
IC = 8 A, IB = 0.8 A
―
1.5
3.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 7 A
―
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
360
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA1987-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
| 2SA200 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -.005A .03 |
| 2SA2002 | 制造商:ISAHAYA 制造商全稱:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE) |
| 2SA2004 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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