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參數資料
| 型號： | 2SA2009G-S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 247K |
| 代理商： | 2SA2009G-S |
Transistors
1
Publication date: April 2007
SJC00349AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2009G
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
120
V
Collector-emitter voltage (Base open)
VCEO
120
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
20
mA
Peak collector current
ICP
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
120
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 0
120
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 50 V, I
E
= 0
100
nA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 2 mA
180
700
Collector-emitter saturation voltage
VCE(sat)
IC
= 20 mA, I
B
= 2 mA
0.6
V
Transition frequency
fT
VCB = 5 V, IE = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
VCE = 40 V, IC = 1 mA, GV = 80 dB
130
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
■ Package
Code
SMini3-F2
Marking Symbol: AR
Pin Name
1. Base
2. Emitter
3. Collector
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA2009R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 |
| 2SA2009S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 |
| 2SA2009T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 20MA I(C) | SC-70 |
| 2SA201 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SA203 |
| 2SA2010 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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