欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): 2SA2110
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 0.5 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 245K
代理商: 2SA2110
Powor Transistors
Publication date : October 2008
SJD00348AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2110
Silicon PNP epitaxial planar type
For low frequency power amplication
Complementary to 2SC2590
Features
Extremely satisfactory linearity of the forward current transfer ratio hFE
High transfer ratio fT
Makes up a complementary pair with 2SC2590, which is optimum for the pre-
driver stage of a 40 W to 60 W output amplier.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–120
V
Collector-emitter voltage (Base open)
VCEO
–120
V
Emitter-base voltage (Collector open)
VEBO
–5
V
Collector current
IC
– 0.5
A
Peak collector current
ICP
–1
A
Collector power dissipation
PC
1.2
W
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = –100 mA, IB = 0
–120
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–5
V
Forward current transfer ratio *1
hFE1 *2 VCE = –10 V, IC = –150 mA
90
220
hFE2
VCE = –5 V, IC = –500 mA
50
100
Collector-emitter saturation voltage
VCE(sat) IC = –300 mA, IB = –30 mA
–1.0
V
Base-emitter saturation voltage
VBE(sat) IC = –300 mA, IB = –30 mA
–1.2
V
Transition frequency
fT
VCB = –10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
(Common base, input open circuited)
Cob
VCB = –10 V, IE = 0, f = 1 MHz
20
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classication
Rank
Q
R
hFE1
90 to 160
120 to 220
Package
Code
TO-126B-A1
Pin Name
1. Emitter
2. Collector
3. Base
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料
PDF描述
2SA2120-O 12 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA2120 12 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA2121-R 15 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA2121 15 A, 200 V, PNP, Si, POWER TRANSISTOR
2SA2125 3 A, 50 V, PNP, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA2112 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High Current Switching Applications
2SA2112_12 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High Current Switching Applications
2SA2112-AN 功能描述:兩極晶體管 - BJT DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SA2113 制造商:ROHM 制造商全稱:Rohm 功能描述:Medium power transistor (−30V, −2A)
2SA2118 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Power Transistors Silicon PNP epitaxial planar type
主站蜘蛛池模板: 桐柏县| 泽普县| 南涧| 沾化县| 天等县| 犍为县| 宜州市| 定远县| 三江| 六枝特区| 肥城市| 石景山区| 嘉禾县| 铁力市| 韶关市| 延寿县| 东兰县| 育儿| 吉林市| 汉寿县| 衡东县| 汶川县| 同仁县| 青铜峡市| 包头市| 盖州市| 黑山县| 天柱县| 内江市| 宁陵县| 商河县| 多伦县| 浑源县| 吉隆县| 青海省| 万载县| 二手房| 怀化市| 佛坪县| 偃师市| 庄河市|