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參數資料
| 型號： | 2SA2119KT2L |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SMT3, SC-59, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 80K |
| 代理商： | 2SA2119KT2L |
2SA2018 / 2SA2030 / 2SA2119K
Transistors
Rev.A
1/2
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
Applications
For switching, for muting.
Features
1) A collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ 250mA
At IC = 200mA / IB = 10mA
Absolute maximum ratings
(Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
PC
Tstg
Limits
15
12
150
55 to +150
Unit
V
mW
°C
Collector-base voltage
Collector-emitter voltage
Collector power dissipation
Storage temperature
IC
ICP
500
1
mA
A
Collector current
Tj
150
Junction temperature
SMT3
300
VMT3
EMT3
Single pulse, Pw=1ms
External dimensions
(Unit : mm)
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
Each lead has same dimensions
Abbreviated symbol : BW
2SA2018
0.8
0.15
0.3Min.
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Each lead has same dimensions
Abbreviated symbol : BW
2SA2119K
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
(2)
(1)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
Each lead has same dimensions
Abbreviated symbol : BW
2SA2030
Electrical characteristics
(Ta=25
°C)
Parameter
Collector-base breakdown voltage
Symbol
Min.
Typ. Max.
Unit
Conditions
BVCBO
15
VIC
=10A
IC
=1mA
IE
=10A
VCB
=15V
IC
=200mA / IB=10mA
VCE
=2V / IC=10mA
VCE
=2V, IE=10mA, fT=100MHz
VCB
=10V, IE=0A, f=1MHz
Collector-emitter breakdown voltage
BVCEO
12
V
Emitter-base breakdown voltage
BVEBO
6
V
Collector cutoff current
ICBO
100
nA
Collector-emitter saturation voltage
VCE (sat)
100
250
mV
DC current transfer ratio
hFE
270
680
Transition frequency
fT
260
MHz
Output capacitance
Cob
6.5
pF
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相關代理商/技術參數 |
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