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參數資料
| 型號： | 2SA2153 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 中文描述： | 進步黨硅外延平面晶體管大電流開關應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 49K |
| 代理商： | 2SA2153 |
2SA2153
No.8123-1/4
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
Adoption of MBIT process.
Low saturation voltage.
High current capacity and wide ASO.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
A
A
mA
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
--50
--50
--6
--2
--4
--400
1.3
3.5
150
Collector Dissipation
PC
Mounted on a ceramic board (450mm
2
0.8mm)
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=--40V, IE=0
VEB=--4V, IC=0
VCE=--2V, IC=--100mA
VCE=--2V, IC=--1.5A
VCE=--10V, IC=--300mA
VCB=--10V, f=1MHz
IC=--1A, IB=--50mA
IC=--1A, IB=--50mA
--1
--1
μ
A
μ
A
DC Current Gain
200
40
560
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking : AZ
420
16
--0.2
--0.9
MHz
pF
V
V
--0.4
--1.2
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8123
21805EA TS IM TB-00000664
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2153
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA2153-TD-E | 功能描述:兩極晶體管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2154 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2SA2154CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications |
| 2SA2154CT-GR(TPL3) | 功能描述:兩極晶體管 - BJT 100mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2154CT-GR,L3F | 功能描述:TRANS PNP 50V 0.1A 制造商:toshiba semiconductor and storage 系列:- 包裝:剪切帶（CT） 零件狀態:有效 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:100mA 電壓 - 集射極擊穿（最大值）:50V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:300mV @ 10mA，100mA 電流 - 集電極截止（最大值）:100nA（ICBO） 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:100mW 頻率 - 躍遷:80MHz 安裝類型:表面貼裝 封裝/外殼:SC-101，SOT-883 供應商器件封裝:CST3 標準包裝:1 |
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