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參數資料
| 型號： | 2SA2195 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UFM, 2-2U1A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 126K |
| 代理商： | 2SA2195 |
2SA2195
2009-04-22
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2195
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
1.7
Collector current
Pulse
ICP
3.5
A
Base current
IB
200
mA
(Note 1)
800
Collector power
dissipation
PC
(Note 2)
500
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on ceramic board.(25.4mm
× 25.4mm × 0.8mmt, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.(25.4mm
× 25.4mm × 1.6mmt, Cu Pad: 645 mm2 )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
-0
.0
5
1.7±0.1
2.1±0.1
0.
65±
0.
05
1
2
2.
0±
0.
1
3
0.7±0.
05
+0
.1
0.
3
0.
16
6±
0.
05
1 :Base
2 :Emitter
3 :Collector
UFM
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| 2SA2199T2LQ | 功能描述:兩極晶體管 - BJT PNP BIPLR HFE RANK Q RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2199T2LR | 功能描述:兩極晶體管 - BJT PNP BIPLR HFE RANK R RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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