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參數資料
| 型號： | 2SA2197 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications |
| 中文描述： | 進步黨/瑞展硅晶體管直流/直流轉換器應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 54K |
| 代理商： | 2SA2197 |
2SA2197 / 2SC6102
No. A0463-1/5
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
( ) : 2SA2197
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Conditions
Ratings
Unit
V
V
V
A
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
(--30)40
(--)30
(--)6
(--)7
(--)9
(--)1.2
Collector Dissipation
PC
1
Tc=25
°
C
10
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)0.1
(--)0.1
560
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
μ
A
μ
A
200
(250)290
(52)40
MHz
pF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0463
92706EA MS IM TC-00000207
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA2197 / 2SC6102
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
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相關代理商/技術參數 |
參數描述 |
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| 2SA2199 | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor |
| 2SA2199T2LQ | 功能描述:兩極晶體管 - BJT PNP BIPLR HFE RANK Q RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2199T2LR | 功能描述:兩極晶體管 - BJT PNP BIPLR HFE RANK R RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2200-TD-E | 制造商:SANYO 功能描述:PNP 60V 0.1A 200 to 400 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 60V 3A SOT89 |
| 2SA2200TD-E | 制造商:Sony Semiconductor Solutions Division 功能描述: |
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