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參數資料
| 型號： | 2SA2209-TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | 2SA2209-TL |
2SA2209
No. A0235-1/4
Applications
High-speed switching applications (switching regulator, driver circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--50
V
Collector-to-Emitter Voltage
VCEO
--50
V
Emitter-to-Base Voltage
VEBO
--6
V
Collector Current
IC
--15
A
Collector Current (Pulse)
ICP
--20
A
Base Current
IB
--3
A
Collector Dissipation
PC
1W
Tc=25°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--40V, IE=0A
--10
A
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--10
A
DC Current Gain
hFE1VCE=--2V, IC=--330mA
200
500
hFE2VCE=--2V, IC=--10A
50
Gain-Bandwidth Product
fT
VCE=--10V, IC=--700mA
120
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
140
pF
Continued on next page.
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0235
D1306EA TI IM TC-00000354
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
2SA2209
PNP Epitaxial Planar Silicon Transistor
50V / 15A High-Speed Switching
Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA2209-TL | 15000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2210 | 20 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2222 | 10 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2223AY | 15 A, 260 V, PNP, Si, POWER TRANSISTOR |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA2209-TL-E | 制造商:SANYO 功能描述:PNP 50V 15A 200 to 500 TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 15A TO-251 |
| 2SA221 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-1 -20V -.015A .07W |
| 2SA2210 | 功能描述:兩極晶體管 - BJT BIP PNP 20A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA2210_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2210-1E | 制造商:ON Semiconductor 功能描述:BIP PNP 20A 50V - Ammo Pack |
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