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參數資料
| 型號： | 2SA44 |
| 英文描述： | High voltage transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 295K |
| 代理商： | 2SA44 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A44
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM
: 0.2 A
Collector-base voltage
V
(BR)CBO
: 400 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A
I
E
=0
400
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 1 mA , I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
=100
A
I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=400 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=400 V ,
5
A
Emitter cut-off current
I
EBO
V
EB
= 4 V , I
C
=0
0.1
A
H
FE 1
V
CE
=10V , I
C
=10 mA
80
300
H
FE 2
V
CE
=10V, I
C
=1mA
70
DC current gain
H
FE 3
V
CE
=10V ,I
C
=100 mA
60
V
CE
(sat)
I
C
=10 mA, I
B
=1mA
0.2
V
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=50 mA, I
B
=5mA
0.3
V
Base-emitter sataration voltage
V
BE
(sat)
I
C
=10 mA, I
B
= 1 mA
0.75
V
Transition frequency
f
T
V
CE
=20V, I
C
=10mA
f =30MHz
50
MHz
1
2
3
TO
92
1.EMITTER
2.BASE
3. COLLECTOR
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