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參數資料
| 型號： | 2SA675 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Voltage Transistors |
| 中文描述： | 高壓晶體管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 89K |
| 代理商： | 2SA675 |
2002
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA675 is a resin sealed mold transistor and is ideal for
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
High voltage
V
CBO
>
80 V, V
CER
>
80 V
Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°
C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
80
V
Collector to emitter voltage
V
CER
*
80
V
Emitter to base voltage
V
EBO
5.0
V
Collector current
I
C
100
mA
Total power dissipation
P
T
250
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
55 to +125
°
C
* R
BE
= 30 k
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°
C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
I
CBO
V
CB
= –60 V, I
E
= 0
1.0
μ
A
Emitter cutoff current
I
EBO
V
EB
= –3.0 V, I
C
= 0
1.0
μ
A
DC current gain
h
FE1
V
CE
= –3.0 V, I
C
= –1.0 mA
60
120
DC current gain
h
FE2
V
CE
= –3.0 V, I
C
= –20 mA
50
120
300
Collector saturation voltage
V
CE(sat)
I
C
= –20 mA, I
B
= –1.0 mA
0.10
1.50
V
Base saturation voltage
V
BE(sat)
I
C
= –20 mA, I
B
= –1.0 mA
0.74
1.20
V
Gain bandwidth product
f
T
V
CE
= –6.0 V, I
E
= 10 mA
100
170
MHz
Output capacitance
C
ob
V
CB
= –10 V, I
E
= 0, f = 1.0 MHz
4.5
10
pF
Storage time
t
stg
Refer to the test circuit.
0.5
1.0
μ
s
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