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參數資料
| 型號： | 2SA733P |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | SC-43B, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 268K |
| 代理商： | 2SA733P |
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PNP SILICON TRANSISTOR
2SA733
PNP SILICON TRANSISTOR
DATA SHEET
Document No. D10868EJ7V0DS00 (7th edition)
(Previous No. TC-3004B)
Date Published March 2004 N CP(K)
Printed in Japan
c
The mark
shows major revised points.
1995
DESCRIPTION
The 2SA733 is designed for use in diver stage of AF amplifier.
FEATURES
High hFE and Excellent Linearity: 200 TYP.
hFE (VCE =
6.0 V, IC = 1.0 mA)
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
55 to +150°C
Junction Temperature
+150
°C Maximum
Maximum Power Dissipations (TA = 25
°C)
Total Power Dissipation
250 mW
Maximum Voltages and Currents (TA = 25
°C)
VCBO
Collector to Base Voltage
60 V
VCEO
Collector to Emitter Voltage
50 V
VEBO
Emitter to Base Voltage
5.0 V
IC
Collector Current
100 mA
IB
Base Current
20 mA
Note Pulse Test PW
≤ 350
s, Duty Cycle ≤ 2%
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Current Gain
hFE
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
180
MHz
Output Capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
4.5
pF
Collector Cutoff Current
ICBO
VCB =
60 V, IE = 0 A
0.1
A
Emitter Cutoff Current
IEBO
VEB =
5.0 V, IC = 0 A
0.1
A
Base to Emitter Voltage
VBE
ICE =
6.0 A, IC = 1.0 mA
0.58
0.62
0.68
V
Collector Saturation Voltage
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
CLASSIFICATION OF hFE
Rank
R
Q
P
E
Range
90 to 180
135 to 270
200 to 400
300 to 600
Remark hFE Test Conditions: VCE =
6.0 V, IC = 1.0 mA
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
1: Emitter
2: Collector
3: Base
EIAJ:
SC-43B
JEDEC: TO-92
IEC:
PA33
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA733 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA733 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA733-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA739 | 3 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2SA777Q | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA733-P | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:PNP Silicon Plastic-Encapsulate Transistor |
| 2SA733-P(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA733P_D26Z | 功能描述:兩極晶體管 - BJT CU FRAME-ECB RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA733-P-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
| 2SA733Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | TO-92 |
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