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參數資料
| 型號： | 2SA885S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 35 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 250K |
| 代理商： | 2SA885S |
Power Transistors
1
Publication date: February 2003
SJD00002BED
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
■ Features
Output of 3 W can be obtained by a complementary pair with
2SC1846
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = 10 A, IE = 0
45
V
Collector-emitter voltage (Base open)
VCEO
IC =
2 mA, I
B = 0
35
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio
hFE1 *
VCE = 10 V, IC = 500 mA
85
340
hFE2
VCE = 5 V, IC = 1 A
50
Collector-emitter saturation voltage
VCE(sat)
IC
= 500 mA, I
B
= 50 mA
0.5
V
Transition frequency
fT
VCE = 10 V, IE = 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
45
V
Collector-emitter voltage (Base open)
VCEO
35
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
1A
Peak collector current
ICP
1.5
A
Collector power dissipation
PC
1.2
W
5.0 *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) *: With a 100
× 100 × 2 mm Al heat sink
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
S
hFE1
85 to 170
120 to 240
170 to 340
8.0
+0.5
–0.1
1.9
±
0.1
3.05
±
0.1
3.8
±
0.3
11.0
±
0.5
16.0
±
1.0
3.2±0.2
0.75±0.1
0.5±0.1
2.3±0.2
4.6±0.2
0.5±0.1
1.76±0.1
123
φ 3.16±0.1
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA886 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Silicon PNP Power Transistors |
| 2SA886P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA886Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA886R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126 |
| 2SA887 | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors |
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